Other articles related with "field-effect mobility":
37306 Qing-Wen Song(宋庆文), Xiao-Yan Tang(汤晓燕), Yan-Jing He(何艳静), Guan-Nan Tang(唐冠男),Yue-Hu Wang(王悦湖), Yi-Meng Zhang(张艺蒙), Hui Guo(郭辉), Ren-Xu Jia(贾仁需),Hong-Liang Lv(吕红亮), Yi-Men Zhang(张义门), Yu-Ming Zhang(张玉明)
  Fabrication and characterization of the normally-off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors
    Chin. Phys. B   2016 Vol.25 (3): 37306-037306 [Abstract] (648) [HTML 0 KB] [PDF 923 KB] (416)
18103 Tian Xue-Yan(田雪雁), Xu Zheng(徐征), Zhao Su-Ling(赵谡玲), Zhang Fu-Jun(张福俊), Yuan Guang-Cai(袁广才),Li Jing(李婧), Sun Qin-Jun(孙钦军),Wang Yun(王赟), and Xu Xu-Rong(徐叙瑢)
  Thickness dependence of surface morphology and charge carrier mobility in organic field-effect transistors
    Chin. Phys. B   2010 Vol.19 (1): 18103-018103 [Abstract] (1411) [HTML 0 KB] [PDF 5000 KB] (897)
3568 Tian Xue-Yan(田雪雁), Xu Zheng(徐征), Zhao Su-Ling(赵谡玲), Zhang Fu-Jun(张福俊), Yuan Guang-Cai(袁广才), and Xu Xu-Rong(徐叙瑢)
  Effects of concentration and annealing on the performance of regioregular poly(3-hexylthiophene) field-effect transistors
    Chin. Phys. B   2009 Vol.18 (8): 3568-3572 [Abstract] (1209) [HTML 1 KB] [PDF 1344 KB] (639)
5078 Tian Xue-Yan(田雪雁), Xu Zheng(徐征), Zhao Su-Ling(赵谡玲), Zhang Fu-Jun(张福俊), Xu Xu-Rong(徐叙瑢), Yuan Guang-Cai(袁广才), Li Jing(李婧), Sun Qin-Jun(孙钦军), and Wang Ying(王赟)
  Vacuum relaxation and annealing-induced enhancement of mobility of regioregular poly(3-hexylthiophene) field-effect transistors
    Chin. Phys. B   2009 Vol.18 (11): 5078-5083 [Abstract] (1382) [HTML 1 KB] [PDF 3151 KB] (535)
1145 Lü Wen(吕文), Peng Jun-Biao(彭俊彪), Yang Kai-Xia(杨开霞), Lan Lin-Feng(兰林峰), Niu Qiao-Li(牛巧利), and Cao Yong(曹镛)
  Polymer thin-film transistor based on a high dielectric constant gate insulator
    Chin. Phys. B   2007 Vol.16 (4): 1145-1149 [Abstract] (1350) [HTML 0 KB] [PDF 866 KB] (627)
First page | Previous Page | Next Page | Last PagePage 1 of 1